Influence of precursor nature on the thermal growth of Tin-Indium oxide layers by MOCVD
Identifieur interne : 000A41 ( Main/Repository ); précédent : 000A40; suivant : 000A42Influence of precursor nature on the thermal growth of Tin-Indium oxide layers by MOCVD
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Abstract
We investigate three indium and two tin precursors for metalorganic chemical vapor deposition to highlight their influence on the resulting indium oxide or tin doped indium oxide (ITO) layers. Selected indium precursors are In(acac)3, In(tmhd)3 and InMe2OtBu, and tin precursors are DBTDA and Sn(acac)2. Acetyl acetonate ligand is identified to induce an organic contamination in the In2O3 and ITO layers when depositions are performed with In(acac)3 or Sn(acac)2 as precursor. The growth kinetic is also investigated. InMe2OtBu presents a higher deposition rate and reactivity; besides the grown films crystallize at lower temperature as compared with the two other indium precursors. Moreover, it is the only studied indium precursors which allow synthesizing In2O3 and ITO layers without oxygen addition. Depending on the atmosphere, layers synthesized with InMe2OtBu present different morphology. In particular, without oxygen addition, a (222) preferential orientation is detected by X-ray diffraction and correlated to a morphology composed of bundles of nanowires as evidenced by transmission electronic microscopy. Concerning tin doping in the ITO layer, incorporation is more efficient when using DBTDA than Sn(acac)2 and when combined with InMe2OtBu than with In(tmhd)3 and In(acac)3.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Influence of precursor nature on the thermal growth of Tin-Indium oxide layers by MOCVD</title><author><name sortKey="Szkutnik, P D" uniqKey="Szkutnik P">P. D. Szkutnik</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>LMGP, Laboratoire des Matériaux et du Génie Physique, 3 parvis Louis Néel</s1><s2>38016 Grenoble</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Rhône-Alpes</region><settlement type="city">Grenoble</settlement></placeName></affiliation></author><author><name sortKey="Rapenne, L" uniqKey="Rapenne L">L. Rapenne</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>LMGP, Laboratoire des Matériaux et du Génie Physique, 3 parvis Louis Néel</s1><s2>38016 Grenoble</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Rhône-Alpes</region><settlement type="city">Grenoble</settlement></placeName></affiliation></author><author><name sortKey="Roussel, H" uniqKey="Roussel H">H. Roussel</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>LMGP, Laboratoire des Matériaux et du Génie Physique, 3 parvis Louis Néel</s1><s2>38016 Grenoble</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Rhône-Alpes</region><settlement type="city">Grenoble</settlement></placeName></affiliation></author><author><name sortKey="Lachaud, C" uniqKey="Lachaud C">C. Lachaud</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Fine Chemical Synthesis and Surface Science - FC3S, Air Liquide - R&D CRCD, 1 chemin de la porte des loges</s1><s2>78354 Les-Loges-en-Josas</s2><s3>FRA</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">Les-Loges-en-Josas</settlement></placeName></affiliation></author><author><name sortKey="Lahootun, V" uniqKey="Lahootun V">V. Lahootun</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Fine Chemical Synthesis and Surface Science - FC3S, Air Liquide - R&D CRCD, 1 chemin de la porte des loges</s1><s2>78354 Les-Loges-en-Josas</s2><s3>FRA</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">Les-Loges-en-Josas</settlement></placeName></affiliation></author><author><name sortKey="Weiss, F" uniqKey="Weiss F">F. Weiss</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>LMGP, Laboratoire des Matériaux et du Génie Physique, 3 parvis Louis Néel</s1><s2>38016 Grenoble</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Rhône-Alpes</region><settlement type="city">Grenoble</settlement></placeName></affiliation></author><author><name sortKey="Jimenez, C" uniqKey="Jimenez C">C. Jiménez</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>LMGP, Laboratoire des Matériaux et du Génie Physique, 3 parvis Louis Néel</s1><s2>38016 Grenoble</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Rhône-Alpes</region><settlement type="city">Grenoble</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0300819</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0300819 INIST</idno><idno type="RBID">Pascal:13-0300819</idno><idno type="wicri:Area/Main/Corpus">000763</idno><idno type="wicri:Area/Main/Repository">000A41</idno></publicationStmt><seriesStmt><idno type="ISSN">0257-8972</idno><title level="j" type="abbreviated">Surf. coat. technol.</title><title level="j" type="main">Surface & coatings technology</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>CVD</term><term>Non metal coating</term><term>Oxidation</term><term>Oxide layer</term><term>Surface treatments</term><term>Tin oxide</term><term>Titanium nitride</term><term>Transmission electron microscopy</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Revêtement non métallique</term><term>Nitrure de titane</term><term>Traitement surface</term><term>Oxyde d'étain</term><term>Couche oxyde</term><term>Oxydation</term><term>Dépôt chimique phase vapeur</term><term>Microscopie électronique transmission</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We investigate three indium and two tin precursors for metalorganic chemical vapor deposition to highlight their influence on the resulting indium oxide or tin doped indium oxide (ITO) layers. Selected indium precursors are In(acac)<sub>3</sub>, In(tmhd)<sub>3</sub> and InMe<sub>2</sub>O<sup>t</sup>Bu, and tin precursors are DBTDA and Sn(acac)<sub>2</sub>. Acetyl acetonate ligand is identified to induce an organic contamination in the In<sub>2</sub>O<sub>3</sub> and ITO layers when depositions are performed with In(acac)<sub>3</sub> or Sn(acac)<sub>2</sub> as precursor. The growth kinetic is also investigated. InMe<sub>2</sub>O<sup>t</sup>Bu presents a higher deposition rate and reactivity; besides the grown films crystallize at lower temperature as compared with the two other indium precursors. Moreover, it is the only studied indium precursors which allow synthesizing In<sub>2</sub>O<sub>3 </sub>and ITO layers without oxygen addition. Depending on the atmosphere, layers synthesized with InMe<sub>2</sub>O<sup>t</sup>Bu present different morphology. In particular, without oxygen addition, a (222) preferential orientation is detected by X-ray diffraction and correlated to a morphology composed of bundles of nanowires as evidenced by transmission electronic microscopy. Concerning tin doping in the ITO layer, incorporation is more efficient when using DBTDA than Sn(acac)<sub>2</sub> and when combined with InMe<sub>2</sub>O<sup>t</sup>Bu than with In(tmhd)<sub>3</sub> and In(acac)<sub>3</sub>.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0257-8972</s0></fA01><fA02 i1="01"><s0>SCTEEJ</s0></fA02><fA03 i2="1"><s0>Surf. coat. technol.</s0></fA03><fA05><s2>230</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Influence of precursor nature on the thermal growth of Tin-Indium oxide layers by MOCVD</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>19th European Conference on Chemical Vapor Deposition (EuroCVD19), Varna, Bulgaria, 1st-6th September 2013</s1></fA09><fA11 i1="01" i2="1"><s1>SZKUTNIK (P. D.)</s1></fA11><fA11 i1="02" i2="1"><s1>RAPENNE (L.)</s1></fA11><fA11 i1="03" i2="1"><s1>ROUSSEL (H.)</s1></fA11><fA11 i1="04" i2="1"><s1>LACHAUD (C.)</s1></fA11><fA11 i1="05" i2="1"><s1>LAHOOTUN (V.)</s1></fA11><fA11 i1="06" i2="1"><s1>WEISS (F.)</s1></fA11><fA11 i1="07" i2="1"><s1>JIMÉNEZ (C.)</s1></fA11><fA12 i1="01" i2="1"><s1>MAURY (Francis)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>GESHEVA (Kostadinka)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>HOFFMANN (Patrick)</s1><s9>ed.</s9></fA12><fA12 i1="04" i2="1"><s1>MALANDRINO (Graziella)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>LMGP, Laboratoire des Matériaux et du Génie Physique, 3 parvis Louis Néel</s1><s2>38016 Grenoble</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA14 i1="02"><s1>Fine Chemical Synthesis and Surface Science - FC3S, Air Liquide - R&D CRCD, 1 chemin de la porte des loges</s1><s2>78354 Les-Loges-en-Josas</s2><s3>FRA</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA15 i1="01"><s1>Empa</s1><s3>CHE</s3><sZ>3 aut.</sZ></fA15><fA15 i1="02"><s1>Univ. Catania</s1><s3>ITA</s3><sZ>4 aut.</sZ></fA15><fA20><s1>305-311</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>15987</s2><s5>354000501507630470</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>28 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0300819</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Surface & coatings technology</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>We investigate three indium and two tin precursors for metalorganic chemical vapor deposition to highlight their influence on the resulting indium oxide or tin doped indium oxide (ITO) layers. Selected indium precursors are In(acac)<sub>3</sub>, In(tmhd)<sub>3</sub> and InMe<sub>2</sub>O<sup>t</sup>Bu, and tin precursors are DBTDA and Sn(acac)<sub>2</sub>. Acetyl acetonate ligand is identified to induce an organic contamination in the In<sub>2</sub>O<sub>3</sub> and ITO layers when depositions are performed with In(acac)<sub>3</sub> or Sn(acac)<sub>2</sub> as precursor. The growth kinetic is also investigated. InMe<sub>2</sub>O<sup>t</sup>Bu presents a higher deposition rate and reactivity; besides the grown films crystallize at lower temperature as compared with the two other indium precursors. Moreover, it is the only studied indium precursors which allow synthesizing In<sub>2</sub>O<sub>3 </sub>and ITO layers without oxygen addition. Depending on the atmosphere, layers synthesized with InMe<sub>2</sub>O<sup>t</sup>Bu present different morphology. In particular, without oxygen addition, a (222) preferential orientation is detected by X-ray diffraction and correlated to a morphology composed of bundles of nanowires as evidenced by transmission electronic microscopy. Concerning tin doping in the ITO layer, incorporation is more efficient when using DBTDA than Sn(acac)<sub>2</sub> and when combined with InMe<sub>2</sub>O<sup>t</sup>Bu than with In(tmhd)<sub>3</sub> and In(acac)<sub>3</sub>.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A65</s0></fC02><fC02 i1="02" i2="X"><s0>001D11C06E</s0></fC02><fC02 i1="03" i2="X"><s0>240</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Revêtement non métallique</s0><s5>55</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Non metal coating</s0><s5>55</s5></fC03><fC03 i1="01" i2="X" l="GER"><s0>Nichtmetallischer Ueberzug</s0><s5>55</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Revestimiento no metálico</s0><s5>55</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Nitrure de titane</s0><s5>56</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Titanium nitride</s0><s5>56</s5></fC03><fC03 i1="02" i2="X" l="GER"><s0>Titannitrid</s0><s5>56</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Titanio nitruro</s0><s5>56</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Traitement surface</s0><s5>57</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Surface treatments</s0><s5>57</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Oxyde d'étain</s0><s5>58</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Tin oxide</s0><s5>58</s5></fC03><fC03 i1="04" i2="X" l="GER"><s0>Zinnoxid</s0><s5>58</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Estaño óxido</s0><s5>58</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Couche oxyde</s0><s5>59</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Oxide layer</s0><s5>59</s5></fC03><fC03 i1="05" i2="X" l="GER"><s0>Oxidschicht</s0><s5>59</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Capa óxido</s0><s5>59</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Oxydation</s0><s5>60</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Oxidation</s0><s5>60</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Dépôt chimique phase vapeur</s0><s5>61</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>CVD</s0><s5>61</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Microscopie électronique transmission</s0><s5>62</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Transmission electron microscopy</s0><s5>62</s5></fC03><fN21><s1>287</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>EuroCVD19 European Conference on Chemical Vapor Deposition</s1><s2>19</s2><s3>Varna BGR</s3><s4>2013-09-01</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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